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RFP12N06RLE - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 12A, 60V.
  • rDS(ON) = 0.135Ω.
  • Electrostatic Discharge Protected.
  • UIS Rating Curve (Single Pulse).
  • Design Optimized for 5V Gate Drive.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E) /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- Symbol D Orde.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet July 1999 File Number 2407.4 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors.