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RFP12N10L Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.

Key Features

  • 12A, 100V.
  • rDS(ON) = 0.200Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Ordering Information PART NUMBER RFP12N10L.

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