RFP12N10L Description
RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is acplished through a special gate oxide design which...
RFP12N10L Key Features
- 12A, 100V
- rDS(ON) = 0.200Ω
- Design Optimized for 5V Gate Drives
- Can be Driven Directly from QMOS, NMOS, TTL Circuits
- patible with Automotive Drive Requirements
- SOA is Power-Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device