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RFP14N06 - N-Channel Power MOSFET

Key Features

  • 14A, 60V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP14N06.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFP14N06 Data Sheet July 1999 File Number 4002.3 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching convertors, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits. Formerly developmental type TA09770. Features • 14A, 60V • rDS(ON) = 0.