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RFD3055, RFD3055SM, RFP3055
Data Sheet July 1999 File Number
3648.2
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49082.
Features
• 12A, 60V • rDS(ON) = 0.
RFP3055 Datasheet
