• Part: RFP4N100
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Intersil
  • Size: 46.00 KB
Download RFP4N100 Datasheet PDF
Intersil
RFP4N100
Features - 4.3A, 1000V - r DS(ON) = 3.500Ω - UIS Rating Curve (Single Pulse) - -55o C to 150o C Operating Temperature - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER RFP4N100 RF1S4N100SM PACKAGE TO-220AB TO-263AB BRAND RFP4N100 F1S4N100 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) 4-528 CAUTION: These devices are sensitive to electrostatic discharge; follow proper S ESD Handling Procedures. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP4N100, RF1S4N100SM Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified RFP4N100, RF1S4N100SM Drain to Source Breakdown Voltage (Note 1) - - - - - - - . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - - - - . . . ....