Datasheet4U Logo Datasheet4U.com

RFP4N35 - N-Channel Power MOSFET

Key Features

  • 4A, 350V and 400V.
  • rDS(ON) = 2.000Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for.

📥 Download Datasheet

Full PDF Text Transcription for RFP4N35 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RFP4N35. For precise diagrams, and layout, please refer to the original PDF.

RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs Features • 4A, 350V and ...

View more extracted text
and 400V, 2.000 Ohm, N-Channel Power MOSFETs Features • 4A, 350V and 400V • rDS(ON) = 2.000Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for applications such 35, as switching regulators, switching converters, motor drivers, /Subrelay drivers, and drivers for high power bipolar switching RFM4N ject () 40, /Autho transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated RFP4N3 r () circuits. 5, /KeyRFP4N4