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RFP50N05 - N-Channel MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 50A, 50V.
  • rDS(ON) = 0.022Ω.
  • UIS Rating Curve (Single Pulse).
  • 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N05 RFP50N05.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFG50N05, RFP50N05 Data Sheet July 1999 File Number 2873.3 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772. Features • 50A, 50V • rDS(ON) = 0.