RFP8N20L Overview
RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is acplished through a special gate oxide design which...
RFP8N20L Key Features
- 8A, 200V
- rDS(ON) = 0.600Ω
- Design Optimized for 5V Gate Drives
- Can be Driven Directly from QMOS, NMOS, TTL Circuits
- patible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedence
- Majority Carrier Device
