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RFP8N20L Datasheet N-channel MOSFET

Manufacturer: Intersil (now Renesas)

Overview: RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09534.

Key Features

  • 8A, 200V.
  • rDS(ON) = 0.600Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedence Ordering Information PART NUMBER RFP8N20L.

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