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RFP8P10 - P-Channel MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 8A, 100V.
  • rDS(ON) = 0.400Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP8P10.

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📁 Similar Datasheet

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RFP8N18 (RFP8N18 / RFP8N20) N-Channel Enhancement Mode Power Field Effect Transistors Harris Semiconductor
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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFP8P05 P-Channel MOSFET
RFP8P06E P-Channel MOSFET
RFP8P06LE P-Channel MOSFET
RFP8N20L N-Channel MOSFET
RFP10N15 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFP8P10 Data Sheet July 1999 File Number 1496.2 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17511. Features • 8A, 100V • rDS(ON) = 0.400Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP8P10 PACKAGE TO-220AB BRAND RFP8P10 G S NOTE: When ordering, include the entire part number.