RFP8P10 Overview
RFP8P10 Data Sheet July 1999 File Number 1496.2 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly...
RFP8P10 Key Features
- 8A, 100V
- rDS(ON) = 0.400Ω
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
