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RFV10N50BE Datasheet 10a/ 500v/ Fast Switching N-channel Enhancement-mode Power MOSFETs

Manufacturer: Intersil (now Renesas)

Overview: S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs Package JEDEC STYLE 5 LEAD TO-247 August.

General Description

The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers.

The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes.

As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1).

Key Features

  • 10A, 500V.
  • rDS(ON) = 0.480Ω.
  • Very Fast Turn-Off Characteristics.
  • Nanosecond Switching Speeds.
  • Electrostatic Discharge Protected.
  • UIS Rating Curve.
  • SOA is Power Dissipation Limited.
  • High Input Impedance.

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