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RFV10N50BE - 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs

General Description

The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers.

The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes.

Key Features

  • 10A, 500V.
  • rDS(ON) = 0.480Ω.
  • Very Fast Turn-Off Characteristics.
  • Nanosecond Switching Speeds.
  • Electrostatic Discharge Protected.
  • UIS Rating Curve.
  • SOA is Power Dissipation Limited.
  • High Input Impedance.

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Part Number Description
RFV10N50 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription (Reference)

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S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs Package JEDEC STYLE 5 LEAD TO-247 August 1995 Features • 10A, 500V • rDS(ON) = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected • UIS Rating Curve • SOA is Power Dissipation Limited • High Input Impedance Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1).