RFW2N06RLE Description
RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process.
RFW2N06RLE Key Features
- 2A, 60V
- rDS(on) = 0.160Ω
- UIS Rating Curve (Single Pulse)
- Design Optimized For 5 Volt Gate Drive
- Can be Driven Directly from CMOS, NMOS, TTL Circuits
- patible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance