RHRU5050 Description
They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits...
RHRU5050 Key Features
- Hyperfast with Soft Recovery
- Operating Temperature
- +175oC
- Avalanche Energy Rated
- Planar Construction
RHRU5050 Applications
- Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<45ns