Datasheet4U Logo Datasheet4U.com

RURP6120CC - 6A/ 1200V Ultrafast Dual Diode

Datasheet Summary

Description

The RURP6120CC is an ultrafast dual diode with soft recovery characteristics (tRR < 70ns).

It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.

Features

  • Ultrafast with Soft Recovery.
  • .

📥 Download Datasheet

Datasheet preview – RURP6120CC

Datasheet Details

Part number RURP6120CC
Manufacturer Intersil Corporation
File Size 83.50 KB
Description 6A/ 1200V Ultrafast Dual Diode
Datasheet download datasheet RURP6120CC Datasheet
Additional preview pages of the RURP6120CC datasheet.

📁 Similar Datasheet

  • RURP640CC - Ultrafast Dual Diodes (Fairchild Semiconductor)
  • RURP650CC - Ultrafast Dual Diodes (Fairchild Semiconductor)
  • RURP660CC - Ultrafast Dual Diodes (Fairchild Semiconductor)
  • RURP1520 - 15A/ 200V Ultrafast Diodes (Fairchild Semiconductor)
  • RURP1540 - 15A/ 400V - 600V Ultrafast Diodes (Fairchild Semiconductor)
  • RURP1560 - 15A/ 400V - 600V Ultrafast Diodes (Fairchild Semiconductor)
  • RURP1560-F085 - 600V Ultrafast Rectifier (ON Semiconductor)
  • RURP1560_F085 - Ultrafast Rectifier (Fairchild Semiconductor)
  • RURP30100 - 1000V Ultrafast Diode (Fairchild Semiconductor)
  • RURP3020 - 30A/ 200V Ultrafast Diode (Fairchild Semiconductor)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
RURP6120CC October 1995 6A, 1200V Ultrafast Dual Diode Package JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated • Planar Construction o CATHODE (FLANGE) Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Description The RURP6120CC is an ultrafast dual diode with soft recovery characteristics (tRR < 70ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
Published: |