Intersil 2N7288D
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.| Part No. | 2N7288D |
|---|---|
| Datasheet | 2N7288D Download |
| Manufacturer |  Intersil |
| Description | Radiation Hardened N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 9A, 250V, RDS(on) = 0.415Ω● Second Generation Rad Hard MOSFET Results From New Design Concepts
● Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5ions/cm2 Having an LET ≤ 35MeV/mg/cm2 and a Range ≥ 30µm at 80% BVDSS
● Gamma Dot
● Photo Current
● Neutron
● Single Event
DESCRIPTION
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.
