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75339S - N-Channel MOSFET

Download the 75339S datasheet PDF. This datasheet also covers the 75339G variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 75A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www. Intersil. com/families/models. htm.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (75339G-Intersil.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 File Number 4363.5 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75339.