Intersil BUZ42
N-Channel Power MOSFET
FEATURES
● 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power● rDS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as
● SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching
● Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (4A,
● Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V,
● High Input Impedance 2.000 Formerly developmental type TA17415.
● Majority Carrier Device Ohm, N● Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ42 TO-220AB BUZ42 MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSFET, SOURCE TODRAIN GATE 220AB) /Creator...