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CA3127 - High Frequency NPN Transistor Array

General Description

The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate.

Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz.

Key Features

  • Gain Bandwidth Product (fT).
  • . >1GHz.
  • Power Gain.
  • . . 30dB (Typ) at 100MHz.
  • Noise Figure.
  • . 3.5dB (Typ) at 100MHz.
  • Five Independent Transistors on a Common Substrate.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CA3127 August 1996 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. Features • Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz • Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz • Noise Figure . . . . . . . . . . . . . . . . 3.