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CA5470E Datasheet PDF

Intersil CA5470E

The CA5470 is an operational amplifier that combines the advantages of both high speed CMOS and bipolar transistors on a single monolithic chip. It is constructed in the BiMOS-E process which adds drain-extension implants to 3µm polygate CMOS, enhancing both the voltage capability and providing vertical bipolar transistors for broadband analog/digital functions. This process lends itself easily to high speed operational amplifiers, comparators, analog switches and interface peripherals, resulting in twice the speed of the conventional CMOS transistors having similar feature size.
Part No. CA5470E
Datasheet CA5470E Download
Manufacturer
Intersil
Description Quad/ 14MHz/ Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output
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CA5470E datasheet page 1 preview

DESCRIPTION

BiMOS-E are broadbased bipolar transistors that have high transconductance, gains more constant with current level, stable “precision” base-emitter offset voltages and superior drive capability. Excellent interface with environmental potentials enable use in 5V logic systems and future 3.3V logic systems. Refer to Application Note AN8811. ESD capability exceeds the standard 2000V level. The CA5470 series can operate with single supply voltages from 3V to 16V or ±1.5V to ±8V. They have guaranteed specifications at both 5V and ±7.5V at room temperature as well as over the full -55oC to 125oC military range.

FEATURES

● High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ (5 x 1012Ω) (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation - Very Low IIO . . . . . . . . . 0.5pA (Typ) at 5V Operation
● ESD Protection to 2000V
● 3V to 16V Power Supply Operation
● Fully Guaranteed Specifications Over Full Military Range
● Wide BW (14MHz...
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