Overview: RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520.
