DG409 Datasheet | Intersil

feature lower signal ON resistance (<100) and faster switch transition time (t TRANS < 250ns) pared to the DG508A or DG509A. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG408 series are made possible by using a high-voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. Power supplies may be single-ended from +5V to +34V, or split from 5V to 20V. The analog switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a 5V analog input range. Features - ON Resistance (Max, 25°C)- - - . . . . 100 - Low Power Consumption (PD) - - - <11m W - Fast Switching Action - t TRANS - - - - - - . . <250ns - t ON/OFF(EN) - - - - - . . . <150ns - Low Charge Injection - Upgrade from DG508A/DG509A - TTL, CMOS patible - Single or Split Supply Operation - Pb-Free Plus Anneal Available (Ro HS pliant) Applications - Data Acquisition Systems - Audio Switching Systems - Automatic Testers - Hi-Rel Systems - Sample and Hold Circuits - munication Systems - Analog Selector...