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FRE9260D - P-Channel Power MOSFET

Datasheet Summary

Description

The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ .

Features

  • 19A, -200V, RDS(on) = 0.210Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(SI) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

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Datasheet Details

Part number FRE9260D
Manufacturer Intersil
File Size 47.85 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FRE9260D Datasheet
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FRE9260D, FRE9260R, FRE9260H June 1998 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-258AA Features • 19A, -200V, RDS(on) = 0.210Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(SI) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.
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