FRK254H Datasheet PDF (N-Channel Power MOSFET)

FRK254H - N-Channel Power MOSFET

Description

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

20A, 250V, RDS(on) = 0.170Ω.
Second Generation Rad Hard MOSFET Results From New Design Concepts.
Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.0nA Per-RAD(Si)/sec Typically Pre-RAD Speciﬁcations for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
Gamma Dot.

Datasheet Details

Part number	FRK254H
Manufacturer	Intersil
File Size	48.58 KB
Description	N-Channel Power MOSFET
Datasheet	FRK254H Datasheet
Additional preview pages of the FRK254H datasheet.

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Full PDF Text Transcription

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FRK254D, FRK254R, FRK254H June 1998 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 20A, 250V, RDS(on) = 0.170Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.

Published: Apr 23, 2005 |