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FRK9260R - P-Channel Power MOSFET

Description

The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 26A, -200V, RDS(on) = 0.200Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

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Datasheet preview – FRK9260R

Datasheet Details

Part number FRK9260R
Manufacturer Intersil
File Size 47.98 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FRK9260R Datasheet
Additional preview pages of the FRK9260R datasheet.

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Full PDF Text Transcription

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FRK9260D, FRK9260R, FRK9260H June 1998 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-204AE Features • 26A, -200V, RDS(on) = 0.200Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.
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