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FRM230H - N-Channel Power MOSFET

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 8A, 200V, RDS(on) = 0.50Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

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Datasheet preview – FRM230H

Datasheet Details

Part number FRM230H
Manufacturer Intersil
File Size 59.47 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FRM230H Datasheet
Additional preview pages of the FRM230H datasheet.

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Full PDF Text Transcription

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FRM230D, FRM230R, FRM230H June 1998 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AA Features • 8A, 200V, RDS(on) = 0.50Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.
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