Datasheet Details
| Part number | FRM450D |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 47.97 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FRM450D Datasheet
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General Description
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Key Features
- 10A, 500V, RDS(on) = 0.600Ω.
- Second Generation Rad Hard MOSFET Results From New Design Concepts.
- Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 30nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E12 Neutrons/cm2 Usable to 3E13 Neutrons/cm2.
- Gamma Dot.