Datasheet4U Logo Datasheet4U.com

FRS234H - 5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Datasheet Summary

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 5A, 250V, RDS(on) = 0.715Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 4.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

📥 Download Datasheet

Datasheet preview – FRS234H

Datasheet Details

Part number FRS234H
Manufacturer Intersil
File Size 49.81 KB
Description 5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet download datasheet FRS234H Datasheet
Additional preview pages of the FRS234H datasheet.
Other Datasheets by Intersil

Full PDF Text Transcription

Click to expand full text
FRS234D, FRS234R, FRS234H June 1998 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-257AA Features • 5A, 250V, RDS(on) = 0.715Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 4.
Published: |