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FRS9140D - 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Description

Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 11A, -100V, RDS(on) = 0.315Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2.
  • Gamma Dot.

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Other Datasheets by Intersil (Renesas)

Part Number Description
FRS9140H 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
FRS9140R 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
FRS9130D 6A/ -100V/ 0.565 Ohm/ Rad Hard/ P-Channel Power MOSFETs
FRS9130H 6A/ -100V/ 0.565 Ohm/ Rad Hard/ P-Channel Power MOSFETs
FRS9130R 6A/ -100V/ 0.565 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Full PDF Text Transcription

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FRS9140D, FRS9140R, FRS9140H June 1998 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 11A, -100V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.
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