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FRS9230H - 4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Description

Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 4A, -200V, RDS(on) = 1.32Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

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Other Datasheets by Intersil (Renesas)

Part Number Description
FRS9230D 4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs
FRS9230R 4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs
FRS9240D 7A/ -200V/ 0.735 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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FRS9240R P-Channel Power MOSFET

Full PDF Text Transcription

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FRS9230D, FRS9230R, FRS9230H June 1998 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 4A, -200V, RDS(on) = 1.32Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.
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