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FSF9150D - P-Channel Power MOSFETs

Download the FSF9150D datasheet PDF. This datasheet also covers the FSF9150R variant, as both devices belong to the same p-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif

Features

  • 22A, -100V, rDS(ON) = 0.140Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 7.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Sp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FSF9150R_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FSF9150R P-Channel Power MOSFETs Intersil Corporation
FSF9250D P-Channel Power MOSFETs Intersil Corporation
FSF9250R P-Channel Power MOSFETs Intersil Corporation
FSF03B60 FRED Nihon Inter Electronics
FSF03D60 FRED Nihon Inter Electronics

Other Datasheets by Intersil (Renesas)

Part Number Description

Full PDF Text Transcription

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June 1998 FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 22A, -100V, rDS(ON) = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 7.
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