Intersil FSGYC260R
N-Channel Power MOSFET
| Part No. | FSGYC260R |
|---|---|
| Datasheet | FSGYC260R Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 56A, 200V, rDS(ON) = 0.033Ω● UIS Rated
● Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
● Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias
● Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS
● Photo Current - 17nA Per-RAD (Si)/s Typically
● Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 The Intersil family of Star*Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETS have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics.
