Intersil FSL110D
N-Channel Power MOSFET
| Part No. | FSL110D |
|---|---|
| Datasheet | FSL110D Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 3.5A, 100V, rDS(ON) = 0.600Ω● Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
● Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
● Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
● Photo Current - 0.3nA Per-RAD(Si)/s Typically
● Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSL110D1 FSL110D3 FSL110R1 FSL110R3 FSL110R4 Package TO-205AF Formerly available as type TA17616. G D S 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 FSL110D, FSL110R
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise S...
