Intersil HCS20MS
HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate. The HCS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.| Part No. | HCS20MS |
|---|---|
| Datasheet | HCS20MS Download |
| Manufacturer |  Intersil |
| Description | Radiation Hardened Dual 4-Input NAND Gate |
| Buy | Stock & Price |
FEATURES
● 3 Micron Radiation Hardened SOS CMOS● Total Dose 200K RAD (Si)
● SEP Effective LET No Upsets: >100 MEV-cm2/mg
● Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
● Dose Rate Survivability: >1 x 1012 RAD (Si)/s
● Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
● Latch-Up Free Under Any Conditions
● Military Temperature Range: -55oC to +125oC
● Significant Power Reduction Compared to LSTTL ICs
● DC Operating Voltage Range: 4.5V to 5.5V
● Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min
● Input Current Levels Ii ≤ 5µA at VOL, VOH 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-183S CDFP3-F14, LEAD FINISH C TOP VIEW A1 B1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC D2 C2 NC B2 A2 Y2
DESCRIPTION
The Intersil A low on any input forces the output to a High state. The HCS20MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). NC C1 D1 Y1 GND Functional Diagram (1, 9) An Bn (2, 10) Ordering Information PART NUMBER HCS2...
