Intersil HCTS10MS
HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate. The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.| Part No. | HCTS10MS |
|---|---|
| Datasheet | HCTS10MS Download |
| Manufacturer |  Intersil |
| Description | Radiation Hardened Triple 3-Input NAND Gate |
| Buy | Stock & Price |
FEATURES
● 3 Micron Radiation Hardened SOS CMOS● Total Dose 200K RAD (Si)
● SEP Effective LET No Upsets: >100 MEV-cm2/mg
● Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
● Dose Rate Survivability: >1 x
● Dose Rate Upset >10 10 1012 RAD (Si)/s RAD (Si)/s 20ns Pulse
● Latch-Up Free Under Any Conditions
● Military Temperature Range: -55oC to +125oC
● Significant Power Reduction Compared to LSTTL ICs
● DC Operating Voltage Range: 4.5V to 5.5V - LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min
● Input Current Levels Ii ≤ 5µA at VOL, VOH 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C TOP VIEW A1 B1 A2 B2 C2 Y2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C1 Y1 C3 B3 A3 Y3
DESCRIPTION
The Intersil A high on all inputs forces the output to a Low state. The HCTS10MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Functional Diagram An (1, 3, 9) Bn Yn (6, 8, 12) Ordering Information PART NUM...
