HCTS20MS
HCTS20MS is Radiation Hardened Dual 4-Input NAND Gate manufactured by Intersil.
Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55o C to +125o C
- Significant Power Reduction pared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- LSTTL Input patibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
- Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS20MS is supplied in...
