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HCTS20MS Datasheet Radiation Hardened Dual 4-input Nand Gate

Manufacturer: Intersil (now Renesas)

Overview: TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND.

General Description

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

A low on any input forces the output to a High state.

The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Opera.

More Datasheets from Intersil (now Renesas)

Part Number Description
HCTS164MS 8-Bit Serial-In/Parallel-Out Shift Register
HCTS191MS Synchronous 4-Bit Up/Down Counter

HCTS20MS Distributor