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HGTG27N60C3DR - N-Channel IGBT

Key Features

  • 54A, 600V, TC = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time at TJ = 150oC.
  • 200ns.
  • Short Circuit Rating at TJ = 150oC.
  • 10µs.
  • Low Conduction Loss Package JEDEC STYLE TO-247 E Ordering Information PART NUMBER HGTG27N60C3DR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0B3D E S G30N6 SIBL HGData T S Sheet O P TM HGTG27N60C3DR June 2000 File Number 4262.1 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode [ /Title (HGT G27N6 0C3D R) /Subject (54A, 600V, Rugged UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions.