Intersil HGTH20N40E1
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.FEATURES
● 15A and 20A, 400V and 500V● VCE(ON) 2.5V
● TFI 1µs, 0.5µs
● Low On-State Voltage
● Fast Switching Speeds
● High Input Impedance
● No Anti-Parallel Diode
APPLICATIONS
● Power Supplies● Motor Drives
● Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE
DESCRIPTION
PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G20N40C1 G20N40E1 G20N50C1 G20N50E1 G15N40C1 G15N40E1 G15N50C1 G15N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1 HGTH20N50C1 HGTH20N40E1 HGTH20N50E1 Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . VCGR 400 500 Reverse Collector-Emitter Voltage . . . . . . . . . . . .