Intersil HGTH20N50E1D
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.| Part No. | HGTH20N50E1D |
|---|---|
| Datasheet | HGTH20N50E1D Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 20A, 400V and 500V● VCE(ON) 2.5V Max.
● TFALL 1µs, 0.5µs
● Low On-State Voltage
● Fast Switching Speeds
● High Input Impedance
● Anti-Parallel Diode Terminal Diagram
APPLICATIONS
● Power Supplies● Motor Drives
● Protective Circuits G N-CHANNEL ENHANCEMENT MODE C
DESCRIPTION
E PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC BRAND G20N40C1D G20N40E1D G20N50C1D G20N50E1D NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1D HGTH20N40E1D 400 400 ±20 20 35 35 20 100 0.8 -55 to +150 HGTH20N50C1D HGTH20N50E1D 500 500 ±20 20 35 35 20 100 0.8 -55 to +150 UNITS V V V A A A A W W/oC oCABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
