Intersil HGTP10N120BN
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.HGTP10N120BN Specifications
- Package : TO-220-3
- Mount Type : Through Hole
- Current Rating : 35A
- Terminals : 3
- Collector Emitter Voltage : 1.2kV
- Collector Emitter Saturation Voltage : 4.2V
- Rise Time : 15ns
- Fall Time : 200ns
- Max Power Dissipation : 298W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | HGTP10N120BN |
|---|---|
| Datasheet | HGTP10N120BN Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 35A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Avalanche Rated
● Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Ordering Information PART NUMBER HGTG10N120BN HGTP10N120BN HGT1S10N120BNS PACKAGE TO-247 TO-220AB T0-263AB BRAND G10N120BN 10N120BN 10N120BN Packaging JEDEC STYLE TO-247 E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNS9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) E G C G E COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,4...
