Intersil HGTP10N40E1D
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.| Part No. | HGTP10N40E1D |
|---|---|
| Datasheet | HGTP10N40E1D Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 10A, 400V and 500V● VCE(ON): 2.5V Max.
● TFALL: 1µs, 0.5µs
● Low On-State Voltage
● Fast Switching Speeds
● High Input Impedance
● Anti-Parallel Diode
APPLICATIONS
● Power Supplies● Motor Drives
● Protective Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C
DESCRIPTION
PACKAGING AVAILABILITY PART NUMBER HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND 10N40C1D 10N40E1D 10N50C1D 10N50E1D G E NOTE: When ordering, use the entire part number.ABSOLUTE MAXIMUM RATINGS
TC = +25oC, Unless Otherwise Specified HGTP10N40C1D HGTP10N40E1D 400 400 ±20 17.5 10 75 0.6 -55 to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 UNITS V V V A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
