Intersil HGTP10N50C1
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.| Part No. | HGTP10N50C1 |
|---|---|
| Datasheet | HGTP10N50C1 Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 10A and 12A, 400V and 500V● VCE(ON): 2.5V Max.
● TFI: 1µs, 0.5µs
● Low On-State Voltage
● Fast Switching Speeds
● High Input Impedance
● No Anti-Parallel Diode
APPLICATIONS
HGTP-TYPES JEDEC TO-220AB● Power Supplies
● Motor Drives
● Protection Circuits COLLECTOR (FLANGE) EMITTER COLLECTOR GATE
DESCRIPTION
PACKAGING AVAILABILITY PART NUMBER HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1 HGTP10N50C1 HGTP10N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G12N40C1 G12N40E1 G12N50C1 G12N50E1 G10N40C1 G10N40E1 G10N50C1 G10N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number.ABSOLUTE MAXIMUM RATINGS
TC = +25oC, Unless Otherwise Specified HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 500 500 15 ±20 12 17.5 75 0.6 -55 to +150 HGTP10N40C1 HGTP10N40E1 400 400 -5 ±20 10 17.5 60 0.48 -55 to +150 HGTP10N50C1 HGTP10N50E1 UNITS 500 500 -5 ±20 10 17.5 60 0.48 -55 to +150...
