Intersil HGTP10N50F1D
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.| Part No. | HGTP10N50F1D |
|---|---|
| Datasheet | HGTP10N50F1D Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 10A, 400V and 500V● Latch Free Operation
● Typical Fall Time < 1.4µs
● High Input Impedance
● Low Conduction Loss
● Anti-Parallel Diode
● tRR < 60ns
DESCRIPTION
The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP10N40F1D HGTP10N50F1D PACKAGE TO-220AB TO-220AB BRAND 10N40F1D 10N50F1D Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E NOTE: When ordering, use the entire part numberABSOLUTE MAXIMUM RATINGS
TC = +25oC, Unless Otherwise Specified HGTP10N40F1D 400 400 12 10 12 ±20 16 10 75 0.6 -55 to +150 260 HGTP10N50F1D 500 500 12 10 12 ±20 16 10 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
