Intersil HGTP12N60B3
The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.| Part No. | HGTP12N60B3 |
|---|---|
| Datasheet | HGTP12N60B3 Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 27A, 600V, TC = 25oC● 600V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB E C Ordering Information PART NUMBER HGTP12N60B3 HGT1S12N60B3S PACKAGE TO-220AB TO-263AB BRAND G12N60B3 G12N60B3 COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S12N60B3S9A. JEDEC TO-263AB Symbol C G E COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,60...
