Intersil HGTP12N60D1
The HGTP12N60D1 was tested per JEDEC standard No. This test method produces the true total Turn-off Energy Loss.| Part No. | HGTP12N60D1 |
|---|---|
| Datasheet | HGTP12N60D1 Download |
| Manufacturer |  Intersil |
| Description | 600V N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 12A, 600V● Latch Free Operation
● Typical Fall Time <500ns
● High Input Impedance
● Low Conduction Loss
DESCRIPTION
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP12N60D1 PACKAGE TO-220AB BRAND G12N60D1 G EABSOLUTE MAXIMUM RATINGS
TC = +25oC, Unless Otherwise Specified HGTP12N60D1 600 600 21 12 48 ±25 30A at 0.8 BVCES 75 0.6 -55 to +150 260 UNITS V V A A A V W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
