Intersil HGTP20N60B3
the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.| Part No. | HGTP20N60B3 |
|---|---|
| Datasheet | HGTP20N60B3 Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 40A, 600V at TC = 25oC● 600V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
● Short Circuit Rated
● Low Conduction Loss
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-263AB Ordering Information PART NUMBER HGTP20N60B3 HGT1S20N60B3S HGTG20N60B3 PACKAGE TO-220AB TO-263AB TO-247 BRAND G20N60B3 G20N60B3 HG20N60B3 JEDEC TO-220AB (ALTERNATE VERSION) E C G E COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A. G Symbol C COLLECTOR (FLANGE) G JEDEC STYLE TO-247 E E C G COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609...
