Intersil HGTP2N120CND
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.FEATURES
● 13A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB (ALTERNATE VERSION) E Ordering Information PART NUMBER HGTP2N120CND HGT1S2N120CNDS PACKAGE TO-220AB TO-263AB BRAND 2N120CND 2N120CND COLLECTOR (FLANGE) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120CNDS9A. Symbol C JEDEC TO-263AB COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,9...