Intersil HGTP5N120
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.FEATURES
● 21A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG5N120BND HGTP5N120BND HGT1S5N120BNDS PACKAGE TO-247 TO-220AB TO-263AB BRAND 5N120BND 5N120BND 5N120BND COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S5N120BNS9A. JEDEC TO-220AB (ALTERNATE VERSION) E C Symbol C COLLECTOR (FLANGE) G G JEDEC TO-263AB E COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4...