Intersil HGTP5N120BN
The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.FEATURES
● 21A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Avalanche Rated
● Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTP5N120BN HGT1S5N120BNS PACKAGE TO-220AB TO-263AB BRAND 5N120BN 5N120BN Packaging JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) E C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S5N120BNS9A. Symbol C JEDEC TO-263AB G COLLECTOR (FLANGE) E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679...