Intersil HGTP7N60B3D
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current.| Part No. | HGTP7N60B3D |
|---|---|
| Datasheet | HGTP7N60B3D Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 14A, 600V, TC = 25oC● 600V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB (ALTERNATE VERSION) E COLLECTOR (FLANGE) C G Ordering Information PART NUMBER HGTP7N60B3D HGT1S7N60B3DS PACKAGE TO-220AB ALT TO-263AB BRAND JEDEC TO-263AB G7N60B3D G7N60B3D COLLECTOR (FLANGE) G E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S7N60B3DS9A. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,...
