Intersil HGTP7N60C3
The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.| Part No. | HGTP7N60C3 |
|---|---|
| Datasheet | HGTP7N60C3 Download |
| Manufacturer |  Intersil |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 14A, 600V at TC = 25oC● 600V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE Ordering Information PART NUMBER HGTD7N60C3S HGTP7N60C3 PACKAGE TO-252AA TO-220AB BRAND G7N60C COLLECTOR (FLANGE) JEDEC TO-252AA G7N60C3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. GATE EMITTER Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
