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HS-302EH - Radiation Hardened CMOS Dual DPST Analog Switch

Download the HS-302EH datasheet PDF. This datasheet also covers the HS-302RH variant, as both devices belong to the same radiation hardened cmos dual dpst analog switch family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HS-302RH_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HS-302RH Radiation Hardened CMOS Dual DPST Analog Switch Intersil Corporation
HS-302RH-T Radiation Hardened CMOS Dual DPST Analog Switch Intersil Corporation
HS-302RH883S Radiation Hardened CMOS Analog Switches Intersil Corporation
HS-303ARH Radiation Hardened CMOS Dual SPDT Analog Switch Intersil Corporation
HS-303RH Radiation Hardened CMOS Dual SPDT Analog Switch Intersil Corporation

Other Datasheets by Intersil (now Renesas)

Part Number Description
HS-302AEH Radiation Hardened BiCMOS Dual DPST Analog Switch
HS-303AEH Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303BEH Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303BRH Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303CEH Radiation Hardened BiCMOS Dual SPDT Analog Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N1cO-oN8TnO8tR8aR-EcINEtCoCTOuEOMrRMMTSMeEIcLENhNoDnrDEicwEDawDlFSwROu.EiRpnPptNeLorEArstWCilC.EcDeMonEmEtSeN/IrtGsTacNt S Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Intersil’s Satellite Applications Flow™ (SAF) devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The HS-302RH, HS-302EH analog switches are a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation.